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Resistive Random Access Memory


Resistive Random Access Memory
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Resistive Random Access Memory Rram


Resistive Random Access Memory Rram
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Author : Shimeng Yu
language : en
Publisher: Springer Nature
Release Date : 2022-06-01

Resistive Random Access Memory Rram written by Shimeng Yu and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-01 with Technology & Engineering categories.


RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.



Resistive Random Access Memory


Resistive Random Access Memory
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Author : Arnab Hazra
language : de
Publisher: LAP Lambert Academic Publishing
Release Date : 2012-04

Resistive Random Access Memory written by Arnab Hazra and has been published by LAP Lambert Academic Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-04 with categories.


Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book.



Resistive Random Access Memory Rram


Resistive Random Access Memory Rram
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Author : Shimeng Yu
language : en
Publisher: Morgan & Claypool Publishers
Release Date : 2016-03-18

Resistive Random Access Memory Rram written by Shimeng Yu and has been published by Morgan & Claypool Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-18 with Technology & Engineering categories.


RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.



Study On The Copper Based Resistive Random Access Memory Rram Devices


Study On The Copper Based Resistive Random Access Memory Rram Devices
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Author :
language : en
Publisher:
Release Date : 2014

Study On The Copper Based Resistive Random Access Memory Rram Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.




Nanotechnology


Nanotechnology
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Author : Shilpi Birla
language : en
Publisher: CRC Press
Release Date : 2022-03-02

Nanotechnology written by Shilpi Birla and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-03-02 with Technology & Engineering categories.


This reference text discusses recent advances in the field of nanotechnology with applications in the fields of electronics sector, agriculture, health services, smart cities, food industry, and energy sector in a comprehensive manner. The text begins by discussing important concepts including bio nanotechnology, nano electronics, nano devices, nano medicine, and nano memories. It then comprehensively covers applications of nanotechnology in different areas including healthcare, energy sector, environment, security and defense, agriculture sector, food industry, automotive sector, smart cities, and Internet of Things (IoT). Aimed at senior undergraduate, graduate students and professionals in the fields of electrical engineering, electronics engineering, nanoscience and nanotechnology, this text: Discusses nano image sensors useful for imaging in medical and for security applications. Covers advances in the field of nanotechnology with their applications. It covers important concepts including neuro simulators, nano medicine, and nano materials. Covers applications of nanotechnology in diverse fields including health sector, agriculture, energy sector, and electronics.



Understanding Of Oxide Based Resistive Random Access Memory Devices With Multi Level Resistance States And Application


Understanding Of Oxide Based Resistive Random Access Memory Devices With Multi Level Resistance States And Application
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Author : Wenbo Chen
language : en
Publisher:
Release Date : 2016

Understanding Of Oxide Based Resistive Random Access Memory Devices With Multi Level Resistance States And Application written by Wenbo Chen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with Nonvolatile random-access memory categories.


Non-volatile memory (NVM) are broadly used in removable media storage, smart phones, solid-state drive, etc. and flash memory technology has been dominating NVM market for over 20 years. However, further scaling of flash memory beyond sub 20 nm node brings tremendous challenges in device performance. For further scaling of Non-Volatile Memory technology beyond flash memory devices, Resistive Random Access Memory (ReRAM) devices have been proposed as a promising candidate due to its superior device performance and CMOS compatible process flow. This dissertation focuses on three aspects of ReRAM research, multi-level cell (MLC) storage capacity, ReRAM crossbar array integration, and ReRAM practical application. In MLC part, multi-step forming technology was developed to substitute traditional one step forming in which current overshoot was suppressed and four stable resistance states were obtained. A comprehensive electrical characterization was conducted and trade-offs among different states were studied. In the section detailing crossbar integration, switchable diode based ZnO ReRAM device was identified as one of the promising candidates. Ru/ZnO/TiN/W stack demonstrated forming-free, self compliance-current controlled, non-volatile, switchable diode type ReRAM characteristics in crossbar arrays which establishes potential application as high-density non-volatile memory. Finally, a complete voice cognitive system was built utilizing MLC ReRAM crossbar array to demonstrate functionality at the simulation level. With these contributions, this work has established solid guidance for future ReRAM fabrication and characterization as well as hardware system realization.



Cerium Oxide Based Resistive Random Access Memory Devices


Cerium Oxide Based Resistive Random Access Memory Devices
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Author : Cheng-Chih Hsieh
language : en
Publisher:
Release Date : 2017

Cerium Oxide Based Resistive Random Access Memory Devices written by Cheng-Chih Hsieh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.


Resistive Random Access Memory (RRAM) is an emerging technology of non-volatile memory (NVM). Although the observation of metal oxide that can undergo an abrupt insulator-metal transition into a conductive state has been known for over 40 years, researchers started investigating those materials for memory applications in late 1990s. It has been considered as the next generation memory technology to replace current flash memory because RRAM has demonstrated feasible switching characteristics and potential to build high density arrays and also RRAM is also compatible with contemporary CMOS processes, which means RRAM can be integrated into current CMOS chips. While the structure of RRAM is a simple metal-insulator-metal (MIM) device, there are numerous materials that exhibit resistive switching. The switching behavior is not only dependent on the switching layer materials but also dependent on the choice of metal electrodes and their interfacial properties. Many metal oxides such as hafnium oxide, titanium oxide, aluminum oxide, nickel oxide (NiO), tantalum oxide and etc. have been studied in details; however, some materials are unexplored such as cerium oxide. In addition to nonvolatile storage applications, RRAM is considered as one of essential elements for advancing neuromorphic computing because of its analog switching and retention characteristics. This thesis investigated CeO[subscript x]-based RRAMs, from its fundamental device characteristics to neuromorphic applications.



Nano Hybrids And Composites Vol 37


Nano Hybrids And Composites Vol 37
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Author : Amir Al-Ahmed
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2022-08-31

Nano Hybrids And Composites Vol 37 written by Amir Al-Ahmed and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-08-31 with Science categories.


Articles collected in this issue present to readers the results of applied nano research. The various nanoparticles were studied and analysed for applications in microelectronics, sensors, biosensors, and devices for energy storage and conversion. The properties of structural nanocomposites based on graphene and nano cellulose were considered in some articles. There was also an analysis of the use of nanomaterials in archaeological object restoration. This volume will be helpful to specialists in nanomaterials and nanotechnologies applications.



Advances In Applied Materials And Electronics Engineering Ii


Advances In Applied Materials And Electronics Engineering Ii
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Author : Brendan Gan
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2013-04-24

Advances In Applied Materials And Electronics Engineering Ii written by Brendan Gan and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-24 with Technology & Engineering categories.


Selected, peer reviewed papers from the 2013 2nd International Conference on Applied Materials and Electronics Engineering (AMEE 2013), April 19-20, 2013, Hong Kong



Materials Science Manufacturing And Civil Engineering


Materials Science Manufacturing And Civil Engineering
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Author : Takashige Omatsu
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2022-12-02

Materials Science Manufacturing And Civil Engineering written by Takashige Omatsu and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-12-02 with Science categories.


Selected peer-reviewed extended articles based on abstracts presented at the 6th ICMEM 2022, 5th ICMDA 2022 and 7th ICCEMS 2022 Aggregated Book