Semiconductor Device Modeling For Vlsi

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Semiconductor Device Modeling For Vlsi

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Author : Rachel Lee
language : en
Publisher:
Release Date : 1993-08

Semiconductor Device Modeling For Vlsi written by Rachel Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-08 with categories.

Semiconductor Device Modeling For Vlsi

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Author : Kwyro Lee
language : en
Publisher:
Release Date : 1993-01-01

Semiconductor Device Modeling For Vlsi written by Kwyro Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Technology & Engineering categories.

Explains basic semiconductor physics, and looks at bipolar junction, metal oxide semiconductor field effect, and compound semiconductor field effect transistors, thin film transistors, and circuit simulation

Semiconductor Device Modeling For Vlsi

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Author : Kwyro Lee
language : en
Publisher:
Release Date : 1993

Semiconductor Device Modeling For Vlsi written by Kwyro Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.

Analysis And Simulation Of Semiconductor Devices

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Author : S. Selberherr
language : en
Publisher: Springer Science & Business Media
Release Date : 1984-07

Analysis And Simulation Of Semiconductor Devices written by S. Selberherr and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984-07 with Computers categories.

The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

Mosfet Modeling For Vlsi Simulation Theory And Practice

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Author : Narain Arora
language : en
Publisher: World Scientific
Release Date : 2007-02-14

Mosfet Modeling For Vlsi Simulation Theory And Practice written by Narain Arora and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-02-14 with Technology & Engineering categories.

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Mosfet Models For Vlsi Circuit Simulation

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Author : Narain D. Arora
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Mosfet Models For Vlsi Circuit Simulation written by Narain D. Arora and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.

Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.

Device Modeling For Analog And Rf Cmos Circuit Design

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Author : Trond Ytterdal
language : en
Publisher: John Wiley & Sons
Release Date : 2003-05-07

Device Modeling For Analog And Rf Cmos Circuit Design written by Trond Ytterdal and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-05-07 with Technology & Engineering categories.

Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 & , and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.

Computational Aspects Of Vlsi Design With An Emphasis On Semiconductor Device Simulation

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Author : Randolph E. Bank
language : en
Publisher: American Mathematical Soc.
Release Date : 1990-02-15

Computational Aspects Of Vlsi Design With An Emphasis On Semiconductor Device Simulation written by Randolph E. Bank and has been published by American Mathematical Soc. this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990-02-15 with Technology & Engineering categories.

Numerical simulation is rapidly becoming an important part of the VLSI design process, allowing the engineer to test, evaluate, and optimize various aspects of chip design without resorting to the costly and time-consuming process of fabricating prototypes. This procedure not only accelerates the design process, but also improves the end product, since it is economically feasible to numerically simulate many more options than might otherwise be considered. With the enhanced computing power of today's computers, more sophisticated models are now being developed. This volume contains the proceedings of the AMS-SIAM Summer Seminar on Computational Aspects of VLSI Design, held at the Institute for Mathematics and Its Applications at the University of Minnesota, in the spring of 1987. The seminar featured presentations by some of the top experts working in this area. Their contributions to this volume form an excellent overview of the mathematical and computational problems arising in this area.

Introduction To Device Modeling And Circuit Simulation

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Author : Tor A. Fjeldly
language : en
Publisher: Wiley-Interscience
Release Date : 1998

Introduction To Device Modeling And Circuit Simulation written by Tor A. Fjeldly and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Computers categories.

This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.

Process And Device Modeling

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Author : Walter L. Engl
language : en
Publisher: North Holland
Release Date : 1986

Process And Device Modeling written by Walter L. Engl and has been published by North Holland this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Computers categories.

This book is the first of a new, seven volume series which aims to provide a comprehensive description of basic methods and technologies related to CAD for VLSI. The series includes up-to-date results and latest developments, with a good balance between theoretical and practical aspects of VLSI design. In this volume emphasis is placed on the basics of modeling, the opening chapters being devoted to fundamental process and device modeling. The following chapters cover different aspects of device modeling and also bridge to process simulation on the one side, and circuit simulation on the other. A systems approach to physical modeling, spanning the whole range of topics covered, is also dealt with. Recent conferences on the subject have signalled that physical modeling combined with technology, device and circuit optimization, will undoubtedly become a major trend in the future.