Emerging Non Volatile Memories
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Emerging Non Volatile Memories
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Author : Seungbum Hong
language : en
Publisher: Springer
Release Date : 2014-11-18
Emerging Non Volatile Memories written by Seungbum Hong and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-11-18 with Technology & Engineering categories.
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Emerging Non Volatile Memories Magnetic And Resistive Technologies
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Author :
language : en
Publisher:
Release Date : 2013
Emerging Non Volatile Memories Magnetic And Resistive Technologies written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Architecture Level Designs Using Emerging Non Volatile Memories
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Author : Jue Wang
language : en
Publisher:
Release Date : 2014
Architecture Level Designs Using Emerging Non Volatile Memories written by Jue Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
SRAM and DRAM have been used to build our memory systems for decades, but their scalability is facing more and more challenges in terms of leakage power and density. Meanwhile, new emerging non-volatile memory technologies (NVMs) are being explored, such as Phase-Change RAM (PCM or PCRAM), Spin-Torque Transfer RAM (STTRAM or MRAM), and Resistive RAM (ReRAM). They have common advantages of high density, low standby power and non-volatility. It could bring benefits by using NVMs to replace SRAM and DRAM in our memory systems. However, NVM technologies still have some disadvantages. First, the NVM write operation is much more expensive in terms of longer latency and higher energy. It causes negative impacts on the system performance and energy efficiency. Second, NVMs usually have limited write endurance, which brings challenges on system reliability. Last but not least, the size of NVM sense amplifier is larger, and how to maintain the area utilization is an issue. All of these NVM characteristics are caused by their basic mechanisms, and they are very difficult to be improved by changing cell designs. Therefore, new architecture techniques are necessary for mitigating these issues and building efficient and reliable systems with NVMs.In this dissertation, NVMs are evaluated as alternatives of traditional memory technologies for different memory levels. We explore NVMs as main memory systems, on-chip caches and GPGPU register files. We analyze their impact on system level and propose several techniques on architecture level to mitigate their disadvantages. We believe these techniques make NVMs more attractive in the future computer systems.
In Search Of The Next Memory
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Author : Roberto Gastaldi
language : en
Publisher: Springer
Release Date : 2017-03-07
In Search Of The Next Memory written by Roberto Gastaldi and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-03-07 with Technology & Engineering categories.
This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.
Modeling And Design Analysis Of Emerging Non Volatile Memories For Future Computer Systems
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Author : Yang Zheng
language : en
Publisher:
Release Date : 2015
Modeling And Design Analysis Of Emerging Non Volatile Memories For Future Computer Systems written by Yang Zheng and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
As traditional SRAM and DRAM are facing leakage power and fabrication difficulties beyond 22nm technology, emerging memory technologies such as spin transfer-torque RAM (STT-RAM), phase-change RAM (PCRAM), and resistive RAM (ReRAM) have been widely studied as promising candidates for the next generation memory technologies. Among all these NVM technologies, STT-RAM is expected to be used as on-chip caches for its fast access latency and better scalability. While ReRAM is predicted to replace NAND flash in the foreseeable future due to its extremely high density.However, several challenges have to be dealt with before these emerging memory technologies being commercialized. Although the read latency of STT-RAM is relatively fast, the write latency remains to be slow. Also, traditional 1-Transistor-1-MTJ cell structure suffers from severe leakage current and dynamic power as the technology node continuously shrinks down. On the other hand, ReRAM also suffers from reliability problems. Due to the stochastic nature of memristor, ReRAM device not only suffers from spatial variation, but also temporal variation. As the cross-point structure is commonly used for ReRAM devices since it offers higher density and lower cost, the reliability issue of ReRAM becomes a constraint on preventing ReRAM being commercialized as large-scale memory.The thesis proposes models and analysis on three novel array-level structures to mitigate the problems existed in STT-RAM based memory technology from different aspects. The parallel shared 1TNJ structure decreases the cell area by rerouting the wires between the access transistor and the MTJ so that one transistor is responsible for multiple MTJs. On the other hand, the 1S1J cross-point structure uses selector as the access transistor for better scalability. Moreover, The FinFET device is introduced to cut off leakage current and reduce the cell area. The thesis also proposes a model for analyzing the reliability and variability issues in ReRAM based memory technology. The thesis provides a detailed analysis on different reliability issues, and proposes several mitigation solutions.
Emerging Non Volatile Memory Technologies
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Author : Wen Siang Lew
language : en
Publisher: Springer Nature
Release Date : 2021-01-09
Emerging Non Volatile Memory Technologies written by Wen Siang Lew and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-09 with Science categories.
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Emerging Memory Technologies
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Author : Yuan Xie
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-21
Emerging Memory Technologies written by Yuan Xie and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-21 with Technology & Engineering categories.
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
Emerging Non Volatile Memory Technologies
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Author : Wen Siang Lew
language : en
Publisher:
Release Date : 2021
Emerging Non Volatile Memory Technologies written by Wen Siang Lew and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Charge Trapping Non Volatile Memories
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Author : Panagiotis Dimitrakis
language : en
Publisher: Springer
Release Date : 2015-08-05
Charge Trapping Non Volatile Memories written by Panagiotis Dimitrakis and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-08-05 with Technology & Engineering categories.
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Charge Trapping Non Volatile Memories
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Author : Panagiotis Dimitrakis
language : en
Publisher: Springer
Release Date : 2017-02-14
Charge Trapping Non Volatile Memories written by Panagiotis Dimitrakis and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-02-14 with Technology & Engineering categories.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.